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| KSC5039F KSC5039F High Voltage Power Switch Switching Application 1 TO-220F 2.Collector 3.Emitter 1.Base NPN Planar Silicon Transistor Absolute Maximum Ratings TC=25C unless otherwise noted Symbol VCBO V CEO VEBO IC ICP IB PC TJ TSTG Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current (DC) Collector Current (Pulse) Base Current Collector Dissipation (TC=25C) Junction Temperature Storage Temperature Value 800 400 7 5 10 3 30 150 -65 ~ 150 Units V V V A A A W C C Electrical Characteristics TC=25C unless otherwise noted Symbol BVCBO BVCEO BVEBO ICBO IEBO hFE VCE(sat) VBE(sat) fT Cob tON tSTG tF Parameter Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collector Cut-off Current Emitter Cut-off Current *DC Current Gain *Collector-Emitter Saturation Voltage *Base-Emitter Saturation Voltage Current Gain Bandwidth Product Output Capacitance Turn ON Time Storage Time Fall Time Test Condition IC = 1mA, IE = 0 IC = 5mA, IB = 0 IC = 1mA, IC = 0 VCB = 500V, IE = 0 VEB = 7V, IC = 0 VCE = 5V, IC = 0.3A IC = 2.5A, IB = 0.5A IC = 2.5A, IB = 0.5A VCE = 5V, IC = 0.1A VCB = 10V , f = 1MHz VCC=150V , IC = 2.5A, IB1 = -IB2 = 0.5A RL = 60 10 40 1 3 0.8 10 1.5 2.0 V V MHz pF s s s Min. 800 400 7 10 10 A A Typ. Max. Units V V * Plus test: PW=300s, Duty Cycle=2% Pulsed (c)2000 Fairchild Semiconductor International Rev. A, February 2000 KSC5039F Typical Characteristics 2.0 1.8 IB = 180mA IC[A], COLLECTOR CURRENT 1.6 1.4 1.2 1.0 hFE, DC CURRENT GAIN IB = 200mA IB = 160mA IB = 140mA IB = 120mA IB = 100mA IB = 80mA IB = 60mA IB = 40mA 1000 VCE = 5V 100 0.8 0.6 0.4 0.2 0.0 0.0 IB = 20mA 10 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 1 0.01 0.1 1 10 VCE[V], COLLECTOR-EMITTER VOLTAGE IC[A], COLLECTOR CURRENT Figure 1. Static Characteristic Figure 2. DC current Gain VBE(sat), VCE(sat)[V], SATURATION VOLTAGE 10 6.0 IC = 5 IB 5.5 5.0 VCE = 5V IC[A], COLLECTOR CURRENT 4.5 4.0 3.5 3.0 2.5 2.0 1.5 1.0 0.5 1 V BE(sat) 0.1 VCE(sat) 0.01 0.01 0.1 1 10 0.0 0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2 IC[A], COLLECTOR CURRENT VBE[V], BASE-EMITTER VOLTAGE Figure 3. Base-Emitter Saturation Voltage Collector-Emitter Saturation Voltage fT(MHz), CURRENT GAIN BANDWIDTH PRODUCT Figure 4. Base-Emitte On Voltage 1000 100 f = 1MHz IE = 0 COB(pF), CAPACITANCE VCE = 10V fREF = 10MHz 10 100 1 10 0.1 1 1 10 100 1000 0.01 0.01 0.1 1 VCB [V], COLLECTOR BASE VOLTAGE IC[A], COLLECTOR CURRENT Figure 5. Collector Output Capacitance Figure 6. Current Gain Bandwidth Product (c)2000 Fairchild Semiconductor International Rev. A, February 2000 KSC5039F Typical Characteristics (Continued) 10 100 VCC = 150V IC = 5IB1 = -5IB2 tSTG IC[A], COLLECTOR CURRENT 10 IC(max).(Pulse) 50s 10 s 1m s 10m tSTG, tF [s], TIME 0 1 IC(max)(DC) 1 s tF 0.1 0.1 0.01 0.1 0.01 1 10 1 10 100 1000 10000 IC[A], COLLECTOR CURRENT VCE [V], COLLECTOR-EMITTER VOLTAGE Figure 7. Switching Time Figure 8. Safe Operating Area 100 80 L=200uH IB2 = -1A 70 IC[A], COLLECTOR CURRENT PC[W], POWER DISSIPATION 10 60 50 1 40 30 0.1 20 10 0.01 10 100 1000 10000 0 0 25 50 o 75 100 125 150 175 VCE[V], COLLECTOR-EMITTER VOLTAGE TC[ C], CASE TEMPERATURE Figure 9. Reverse Bias Safe Operaing Area Figure 10. Power Derating (c)2000 Fairchild Semiconductor International Rev. A, February 2000 KSC5039F Package Demensions TO-220F 3.30 0.10 10.16 0.20 (7.00) o3.18 0.10 2.54 0.20 (0.70) 6.68 0.20 15.80 0.20 (1.00x45) MAX1.47 9.75 0.30 0.80 0.10 (3 ) 0 0.35 0.10 2.54TYP [2.54 0.20] #1 0.50 -0.05 2.54TYP [2.54 0.20] 4.70 0.20 +0.10 2.76 0.20 9.40 0.20 Dimensions in Millimeters (c)2000 Fairchild Semiconductor International Rev. A, February 2000 15.87 0.20 TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. ACExTM BottomlessTM CoolFETTM CROSSVOLTTM E2CMOSTM FACTTM FACT Quiet SeriesTM FAST(R) FASTrTM GTOTM DISCLAIMER HiSeCTM ISOPLANARTM MICROWIRETM POPTM PowerTrench(R) QFETTM QSTM Quiet SeriesTM SuperSOTTM-3 SuperSOTTM-6 SuperSOTTM-8 SyncFETTM TinyLogicTM UHCTM VCXTM FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. LIFE SUPPORT POLICY FAIRCHILD'S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR INTERNATIONAL. As used herein: 1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or sustain life, or (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in significant injury to the user. 2. A critical component is any component of a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness. PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Advance Information Product Status Formative or In Design First Production Definition This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only. Preliminary No Identification Needed Full Production Obsolete Not In Production (c)2000 Fairchild Semiconductor International Rev. E |
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